Last Updated on October 15, 2025 by admin
Atomic-scale studies of dopants in transition metal dichalcogenides (TMD) are important for tailoring their physical and chemical properties, and provide a clearer picture of structure-property correlation. Here, we have investigated nitrogen-induced defects in nitrogen-plasma-treated VSe₂ using scanning tunneling microscopy (STM), spectroscopy (STS), and density functional theory (DFT). Three main defect types were identified: substitutional nitrogen atoms at bottom Se sites, complex unidentified structures, and mobile nitrogen adatoms at quasi-bridge positions. These results reveal how nitrogen doping profoundly influences the atomic and electronic structure of VSe₂, offering new insights for controlled defect engineering in transition metal dichalcogenides.